Why all SiC Schottky diodes are not made equal | Efficiency Wins
Why all SiC Schottky diodes are not made equal | Efficiency Wins
Cut a) and top view b) of the structure of an MPS-Diode. In b) Black:... | Download Scientific Diagram
Figure 2 from Ultrahigh-Voltage SiC MPS Diodes With Hybrid Unipolar/Bipolar Operation | Semantic Scholar
4.4.3.2 MPS Diode Simulation
Why all SiC Schottky diodes are not made equal | Efficiency Wins
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Reverse Characteristic Model of SiC MPS Diode | SpringerLink
Thin SiC Schottky Power Diodes Improve Performance in Power Conversion Applications - Power Electronics News
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Improved JBS structure to reduce the leakage current and increase the surge current capability | 臺灣東芝電子零組件股份有限公司 | 台灣
SiC JBS/ MPS Diode I-V Operation
Advantages of the 1200 V SiC Schottky Diode with MPS Design
Materials | Free Full-Text | The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes
The Wolfspeed MPS Diode Advantage - YouTube
Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model - Li - 2020 - IET Power Electronics - Wiley Online Library
The Wolfspeed MPS Diode Advantage - YouTube
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Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode | SpringerLink
GE06MPS06A - Genesic Semiconductor - Silicon Carbide Schottky Diode, MPS Gen V, Single
MPS (Merged p-i-n/Schottky) Diode
Figure 1 from Comparative study of contact topographies of 4.5kV SiC MPS diodes for optimizing the forward characteristics | Semantic Scholar
4.4.3.1 MPS Diode Structure
